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| Silicon N Channel MOSFET Triode q BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type BF 999 Marking LB Ordering Code (tape and reel) Q62702-F1132 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA 60 C Storage temperature range Channel temperature Thermal Resistance Junction - ambient 2) Rth JA Symbol VDS ID Values 20 30 10 200 Unit V mA IGSM Ptot Tstg Tch mW - 55 ... + 150 C 150 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BF 999 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 A, - VGS = 4 V Gate-source breakdown voltage IGS = 10 mA, VDS = 0 Values typ. max. Unit V(BR) DS 20 6.5 - 5 - - - - - - - 12 50 18 2.5 V V(BR) GSS IGSS Gate-source leakage current VGS = 5 V, VDS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 A nA mA V IDSS - VGS (p) AC Characteristics Forward transconductance VDS = 10 V, ID = 10 mA, f = 1 kHz Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Reverse transfer capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Output capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Power gain (test circuit) VDS = 10 V, ID = 10 mA, f = 200 MHz, GG = 2 mS, GL = 0.5 mS Noise figure (test circuit) VDS = 10 V, ID = 10 mA, f = 200 MHz, GG = 2 mS, GL = 0.5 mS gfs Cgss Cdg Cdss Gp 14 - - - - 16 2.5 25 1 25 - - - - - mS pF fF pF dB F - 1 - Semiconductor Group 2 BF 999 Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) Gate transconductance gfs = f (VGS) VDS = 10 V, IDSS = 10 mA, f = 1 kHz Drain current ID = f (VGS) VDS = 10 V Semiconductor Group 3 BF 999 Gate input capacitance Cgss = f (VGS) VDS = 10 V, IDSS = 10 mA, f = 1 MHz Output capacitance Cdss = f (VDS) VGS = 0, IDSS = 10 mA, f = 1 MHz Reverse transfer capacitance Cdg = f (VDS) IDSS = 10 mA, f = 1 MHz, VGS = 0 Gate input admittance y11s VDS = 10 V, VGS = 0, IDSS = 10 mA, (common-source) Semiconductor Group 4 BF 999 Gate forward transfer admittance y21s VDS = 10 V, VGS = 0, IDSS = 10 mA, (common-source) Output admittance y22s VDS = 10 V, VGS = 0, IDSS = 10 mA, (common-source) Test circuit for power gain and noise figure f = 200 MHz Semiconductor Group 5 |
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